Modeling of MOSFETs parameters and volt-ampere characteristics in a wide temperature range for low noise amplifiers design

Alexandr M. Pilipenko; Vadim N. Biryukov

doi:10.1109/EWDTS.2014.7027065

2014 East-West Design & Test Symposium (EWDTS)

Modeling of MOSFETs parameters and volt-ampere characteristics in a wide temperature range for low noise amplifiers design

Year: 2014, Pages: 1-4

DOI Bookmark: 10.1109/EWDTS.2014.7027065

Authors

Alexandr M. Pilipenko, The Department of Fundamentals of Radio Engineering, Southern Federal University, Taganrog, Russian Federation
Vadim N. Biryukov, The Department of Fundamentals of Radio Engineering, Southern Federal University, Taganrog, Russian Federation

Abstract

The temperature dependencies of the basic parameters of MOSFETs in a temperature range 20 – 300 K are measured. The universal formal four-parametric model, which allows to approximate all experimental temperature dependencies with the relative error less than 1 % is proposed. The hybrid analytical model efficiency for approximation of volt-ampere characteristics of MOSFETs is proved.

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Modeling of MOSFETs parameters and volt-ampere characteristics in a wide temperature range for low noise amplifiers design

Authors

Abstract

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