Abstract
Fullerene molecular devices nowadays are becoming the intensive area of research due to their fascinating electronic, optical and structural properties. In this paper we have expounded the current characteristics of all-boron-fullerene B40 molecular device on doping with various elements. The advertent analysis of transport properties of B40 was done by doping third period elements viz aluminium, silicon, phosphorus and sulphur in pure B40. Results showed higher current carrying capability of phosphorus doped fullerene in comparison to pure B40 while aluminium, silicon and sulfur doped fullerene gave lesser value of current. The results bring about the possibility of utilizing doped B40 fullerenes in upcoming molecular electronics applications.