2020 3rd International Conference on Electron Device and Mechanical Engineering (ICEDME)
Online Junction Temperature Measurement Method of SiC MOS Devices Using Multiple Electrical Parameters at Transient Surge Current
DOI Bookmark: 10.1109/ICEDME50972.2020.00018
Authors
Boyang Liu, Beijing University of Technology,Semiconductor Device Reliability Physics Laboratory,Beijing,ChinaChunsheng Guo, Beijing University of Technology,Semiconductor Device Reliability Physics Laboratory,Beijing,China
Sijin Wang, Beijing University of Technology,Semiconductor Device Reliability Physics Laboratory,Beijing,China
Hang Wei, Beijing University of Technology,Semiconductor Device Reliability Physics Laboratory,Beijing,China
Lei Wei, Beijing University of Technology,Semiconductor Device Reliability Physics Laboratory,Beijing,China