Fabrication of ZnO/HfO2/ZnO nanowire capacitors by MOCVD

Yohei Takeuchi; Hironori Fujisawa; Masaru Shimizu; Seiji Nakashima

doi:10.1109/ICIEV.2017.8338519

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2017 6th International Conference on Informatics, Electronics and Vision & 2017 7th International Symposium in Computational Medical and Health Technology (ICIEV-ISCMHT)

Fabrication of ZnO/HfO2/ZnO nanowire capacitors by MOCVD

Year: 2017, Pages: 1-1

DOI Bookmark: 10.1109/ICIEV.2017.8338519

Authors

Yohei Takeuchi, Department of Electronics and Computer Science, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, Japan
Hironori Fujisawa, Department of Electronics and Computer Science, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, Japan
Masaru Shimizu, Department of Electronics and Computer Science, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, Japan
Seiji Nakashima, Department of Electronics and Computer Science, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, Japan

Fabrication of ZnO/HfO2/ZnO nanowire capacitors by MOCVD

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Abstract