Effect of gate length on the ballistic performance of nanoscale InGaSb double gate MOSFET

Muhammad Shaffatul Islam; Md. Nur Kutubul Alam; Md. Rafiqul Islam

doi:10.1109/ICIEV.2014.6850707

2014 International Conference on Informatics, Electronics & Vision (ICIEV)

Effect of gate length on the ballistic performance of nanoscale InGaSb double gate MOSFET

Year: 2014, Pages: 1-4

DOI Bookmark: 10.1109/ICIEV.2014.6850707

Authors

Muhammad Shaffatul Islam, Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, 9203, Bangladesh
Md. Nur Kutubul Alam, Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, 9203, Bangladesh
Md. Rafiqul Islam, Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, 9203, Bangladesh

Abstract

Effect of gate length on the ballistic performance of nanoscale In0.2Ga0.8Sb double gate n-MOSFET is studied. Non equilibrium greens function (NEGF) method is used to find the current-voltage characteristics. Well known SILVACO's ATLAS device simulation package is used to carry out the simulation. Three different gate length, 10nm, 13nm and 15 nm are analyzed. The simulation result shows that the drain current increases and the threshold voltage decreases with decrease in gate length. But the subthreshold swing increases with it. It reveals that the current voltage characteristic gets better but the electrostatic control of the gate becomes poorer with decrease in gate length.

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Effect of gate length on the ballistic performance of nanoscale InGaSb double gate MOSFET

Authors

Abstract

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