Anomalous leakage current in silicon oxynitride thin films grown by microwave excited nitrogen plasma nitridation

R. Perera; A. Ikeda; R. Hattori; Y. Kuroki

doi:10.1109/ICPADM.2003.1218611

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IEEE 7th International Conference on Properties and Applications of Dielectric Materials

Anomalous leakage current in silicon oxynitride thin films grown by microwave excited nitrogen plasma nitridation

Year: 2003, Volume: 3, Pages: 1084-1087 vol.3

DOI Bookmark: 10.1109/ICPADM.2003.1218611

Authors

R. Perera, Dept. of Electron., Kyushu Univ., Fukuoka, Japan
A. Ikeda, Dept. of Electron., Kyushu Univ., Fukuoka, Japan
R. Hattori, Dept. of Electron., Kyushu Univ., Fukuoka, Japan
Y. Kuroki, Dept. of Electron., Kyushu Univ., Fukuoka, Japan

Anomalous leakage current in silicon oxynitride thin films grown by microwave excited nitrogen plasma nitridation

Authors

Abstract