Abstract
From year to year there are lot of new requirements regarding to the lifetime and reliability of integrated circuits (IC) especially in automotive applications. In align with technology scaling the amount of device's reliability issues are increasing but the quality requirements becoming stronger. Now the aging phenomena becomes one of the critical issues in applications with longer life time. Hence the aging sensors becoming one of the key part of today's ICs. In this paper a new aging sensor will be presented. This new sensor can predict various failures in ICs by showing low level of sensitivity to process, power and temperature variations. Sensor circuit was realized by 32 nm technology node and proved results usefulness by simulations presented in the paper.