Abstract
In this paper, we fabricated the poly-Si¡Voxide¡Vnitride¡Voxide¡Vsilicon (SONOS)-type Flash memories on polycrystalline-silicon thin films. Employing a powerful defect passivation technique, i.e., NH3 plasma treatment, the charge storage capability was clearly observed to be remarkably improved including charge storage, drain disturbance, and gate disturbance.