Abstract
This paper describes a new built-in current sensor (BICS) design, comprised of a MAGFET current sensor, stochastic sensor, self-calibration tool, counter, and scan chain. By indirectly measuring the current, the sensor avoids the unacceptable drawbacks of past BICS designs. Test chips fabricated in 180 nm and 250 nm technology demonstrate that the sensor can be used for IDDQ testing of large, high-performance, deep sub-micron circuits. This sensor should extend practical IDDQ testing to the 35 nm technology generation.