Abstract
Silicon-based solid state plasma antenna is characterized by its wide radiation range, good stealth characteristic and dynamic reconfiguration, which will have broad application prospects in the future. In this paper, a silicon-based high integration antenna with dynamic reconfigurability is designed. Based on the semiconductor process technique, this antenna is designed on a high resistivity silicon substrate. The solid state plasma channel is formed based on the forward lateral diodes which act as radiating elements, and the reconfigurability of this antenna can be shown by controlling the states of devices. According to the above research results, three different working states of this antenna is realized, which verified the feasibility and progressiveness of the system.