Development of Radiation Hardened by Design(RHBD) primitive gates using 0.18μm CMOS technology

Rakesh Trivedi; N. M. Devashrayee; Usha S Mehta; N. M. Desai; Himanshu Patel

doi:10.1109/ISVDAT.2015.7208046

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2015 19th International Symposium on VLSI Design and Test (VDAT)

Development of Radiation Hardened by Design(RHBD) primitive gates using 0.18μm CMOS technology

Year: 2015, Pages: 1-2

DOI Bookmark: 10.1109/ISVDAT.2015.7208046

Authors

Rakesh Trivedi, ISRO-RESPOND Programme, Nirma University, Ahmedabad
N. M. Devashrayee, EC Department, Nirma University, Ahmedabad
Usha S Mehta, EC Department, Nirma University, Ahmedabad
N. M. Desai, Space Application Center - Indian Space Research Organization (SAC-ISRO), Ahmedabad
Himanshu Patel, Space Application Center - Indian Space Research Organization (SAC-ISRO), Ahmedabad

Development of Radiation Hardened by Design(RHBD) primitive gates using 0.18μm CMOS technology

Authors

Abstract