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1991 International Symposium on VLSI Technology, Systems, and Applications

May 22 1991 to May 24 1991

Taipei, Taiwan

Table of Contents

High-density ASICs with a three-dimensional CMOS processFull-text access may be available. Sign in or learn about subscription options.pp. 297,298,299,300
An analytical model of threshold voltage and subthreshold swing for ultra-thin-film SOI MOSFETsFull-text access may be available. Sign in or learn about subscription options.pp. 293,294,295,296
A new model on the mechanisms of high-frequency AC hot-carrier effects in MOS devicesFull-text access may be available. Sign in or learn about subscription options.pp. 288,289,290,291,292
A new MOSFET hot carrier model in SPICE feasible for VLSI reliability analysisFull-text access may be available. Sign in or learn about subscription options.pp. 283,284,285,286,287
The improvement of I-V characteristics curve fitting by the modification of SPICE model-level 3Full-text access may be available. Sign in or learn about subscription options.pp. 278,279,280,281,282
Depletion region formation at low temperaturesFull-text access may be available. Sign in or learn about subscription options.pp. 274,275,276,277
Advanced bipolar technology for the 1990sFull-text access may be available. Sign in or learn about subscription options.pp. 269,270,271,272,273
Stacked capacitor cells for 64 MDRAMFull-text access may be available. Sign in or learn about subscription options.pp. 264,265,266,267,268
A 13-bit analog interface for microprocessor-based systemsFull-text access may be available. Sign in or learn about subscription options.pp. 260,261,262,263
An instruction set for a programmable signal processor dedicated to Viterbi detectionFull-text access may be available. Sign in or learn about subscription options.pp. 247,248,249,250,251
A design and implementation of multi-dimensional Y-C separation filters for NTSC TV signalsFull-text access may be available. Sign in or learn about subscription options.pp. 242,243,244,245,246
A video buffer controller design for HDTV/BISDN systemFull-text access may be available. Sign in or learn about subscription options.pp. 237,238,239,240,241
Experimental VLSI for HDTV and broadband fiber networksFull-text access may be available. Sign in or learn about subscription options.pp. 232,233,234,235,236
HDTV in 1990sFull-text access may be available. Sign in or learn about subscription options.pp. 227,228,229,230,231
A novel method to characterize and screen mobile ion contaminated nonvolatile memory productsFull-text access may be available. Sign in or learn about subscription options.pp. 224,225,226
Effects of the field-edge transistor on SOI MOSFETsFull-text access may be available. Sign in or learn about subscription options.pp. 219,220,221,222,223
Implications of waveform and thickness dependence of SiO/sub 2/ breakdown on accelerated testingFull-text access may be available. Sign in or learn about subscription options.pp. 214,215,216,217,218
Characterization of thin oxide damage during aluminum etching and photoresist ashing processesFull-text access may be available. Sign in or learn about subscription options.pp. 210,211,212,213
Suppression of both sidewall injection and hot-carrier effects using laterally graded emitter in bipolar transistorsFull-text access may be available. Sign in or learn about subscription options.pp. 205,206,207,208,209
Determination of MOSFET's channel doping profile right up to SiO/sub 2//Si interfaceFull-text access may be available. Sign in or learn about subscription options.pp. 201,202,203,204
Lateral distribution of hot-carrier-induced oxide charge and interface traps in MOSFET'sFull-text access may be available. Sign in or learn about subscription options.pp. 196,197,198,199,200
Simulation of P- and N-MOSFET hot-carrier degradation in CMOS circuitsFull-text access may be available. Sign in or learn about subscription options.pp. 191,192,193,194,195
VLSI/ULSI research methodology in the US and JapanFull-text access may be available. Sign in or learn about subscription options.pp. 187,188,189,190
GEAR: a general area router using planning approachFull-text access may be available. Sign in or learn about subscription options.pp. 182,183,184,185,186
VLSI routing methodology for quadrupole metal sea-of-cells designFull-text access may be available. Sign in or learn about subscription options.pp. 177,178,179,180,181
Using timed Boolean algebra to solve false path problem in timing analysisFull-text access may be available. Sign in or learn about subscription options.pp. 172,173,174,175,176
Evaluation driven layout synthesisFull-text access may be available. Sign in or learn about subscription options.pp. 167,168,169,170,171
Circuit optimization techniques in DROIDFull-text access may be available. Sign in or learn about subscription options.pp. 162,163,164,165,166
Simultaneous topology selection and timing assignment for LSI circuits based on semi-analytical delay-area expressionFull-text access may be available. Sign in or learn about subscription options.pp. 157,158,159,160,161
Transient sensitivity computation for waveform relaxation-based timing simulationFull-text access may be available. Sign in or learn about subscription options.pp. 152,153,154,155,156
An integrated technology CAD environmentFull-text access may be available. Sign in or learn about subscription options.pp. 147,148,149,150,151
Approaches to high pin count and high power surface mount packagesFull-text access may be available. Sign in or learn about subscription options.pp. 141,142,143,144,145,146
The advanced improvement of PN mesa junction diode prepared by silicon-wafer direct bondingFull-text access may be available. Sign in or learn about subscription options.pp. 136,137,138,139,140
Color CCD image sensorFull-text access may be available. Sign in or learn about subscription options.pp. 126,127,128,129,130
Photo-excited dry cleaning for ULSI devicesFull-text access may be available. Sign in or learn about subscription options.pp. 122,123,124,125
A deep-submicrometer raised source/drain LDD structure fabricated using hot-wall epitaxyFull-text access may be available. Sign in or learn about subscription options.pp. 117,118,119,120,121
Double spacer technique for titanium self-aligned silicidation technologyFull-text access may be available. Sign in or learn about subscription options.pp. 113,114,115,116
Al-plug stacked contact/via process for deep submicron CMOS multilayer metal technologyFull-text access may be available. Sign in or learn about subscription options.pp. 109,110,111,112
Suppression of boron penetration in BF/sub 2//sup +/-implanted polysilicon gated p-MOSFETs with reoxidized nitrided gate oxidesFull-text access may be available. Sign in or learn about subscription options.pp. 104,105,106,107,108
Cooling for high heat flux VLSI systemsFull-text access may be available. Sign in or learn about subscription options.pp. 99,100,101,102
A 32 bit microcontroller with an embedded flash EEPROMFull-text access may be available. Sign in or learn about subscription options.pp. 94,95,96,97,98
Identification of DRAM sense amplifier imbalance using hot carrier evaluationFull-text access may be available. Sign in or learn about subscription options.pp. 90,91,92,93
Circuit techniques for a wide world I/O path 64 Meg DRAMFull-text access may be available. Sign in or learn about subscription options.pp. 87,88,89
A subnanosecond clamped-bit-line sense amplifier for 1T dynamic RAMsFull-text access may be available. Sign in or learn about subscription options.pp. 82-86
A coded block adaptive neural network structure for pattern recognition VLSIFull-text access may be available. Sign in or learn about subscription options.pp. 79,80,81
Multiprocessor-based video motion detection using adaptive neural systemsFull-text access may be available. Sign in or learn about subscription options.pp. 74,75,76,77,78
A scheme for implementation of neural networks with replicated receptive fieldsFull-text access may be available. Sign in or learn about subscription options.pp. 69,70,71,72,73
A multichip analog neural networkFull-text access may be available. Sign in or learn about subscription options.pp. 64,65,66,67,68
DARPA artificial neural network technology programFull-text access may be available. Sign in or learn about subscription options.pp. 61,62,63
Misfit stress in p/p+ epitaxial silicon wafers: effect and eliminationFull-text access may be available. Sign in or learn about subscription options.pp. 57,58,59,60
A high quality stacked thermal/LPCVD gate oxide for ULSIFull-text access may be available. Sign in or learn about subscription options.pp. 52,53,54,55,56
Pits reduction for poly Buffer LOCOS in VLSI fabricationFull-text access may be available. Sign in or learn about subscription options.pp. 43,44,45,46
Electron beam direct writing systems for 64 Mbit DRAM and beyondFull-text access may be available. Sign in or learn about subscription options.pp. 33,34,35,36,37
Selective silylation and plasma patterning of photoresist in submicron lithographyFull-text access may be available. Sign in or learn about subscription options.pp. 28,29,30,31,32
Advanced i-line lithography for 0.5 mu m CMOS technologyFull-text access may be available. Sign in or learn about subscription options.pp. 22,23,24,25,26,27
Quarter- and sub-quarter-micron optical lithographyFull-text access may be available. Sign in or learn about subscription options.pp. 16,17,18,19,20,21
Gigascale integration (GSI) beyond 2001Full-text access may be available. Sign in or learn about subscription options.pp. 12,13,14,15
The European microelectronics industry and its challenge for the ninetiesFull-text access may be available. Sign in or learn about subscription options.pp. 8,9,10,11
Home electronics in the 1990sFull-text access may be available. Sign in or learn about subscription options.pp. 1,2,3,4,5,6
Gallium arsenide and silicon for optical electronics: applications and technology trade-offsFull-text access may be available. Sign in or learn about subscription options.pp. 389,390,391,392,393
SCOPE-a simultaneous contact and planarization etch process for low-cost high-performance CMOS applicationsFull-text access may be available. Sign in or learn about subscription options.pp. 385,386,387,388
Large-area MOVPE growth for HEMT LSIFull-text access may be available. Sign in or learn about subscription options.pp. 380,381,382,383,384
Peeling-free tungsten polycide process and its application in DRAM fabricationFull-text access may be available. Sign in or learn about subscription options.pp. 371,372,373,374,375
A 64 Mbit DRAM trench capacitor cell with field-plate isolationFull-text access may be available. Sign in or learn about subscription options.pp. 366,367,368,369,370
Low power, low voltage memories for portable electronicsFull-text access may be available. Sign in or learn about subscription options.pp. 354,355,356,357
DRAM technology trend and prospectFull-text access may be available. Sign in or learn about subscription options.pp. 349,350,351,352,353
High performance CMOS VLSI chip set for synchronous optical transmission systemsFull-text access may be available. Sign in or learn about subscription options.pp. 344,345,346,347,348
ARES-architecture reinforcing superscalarFull-text access may be available. Sign in or learn about subscription options.pp. 338,339,340,341,342,343
CMOS cell base implementation of the SPARC architectureFull-text access may be available. Sign in or learn about subscription options.pp. 334,335,336,337
Modeling and design analysis of a workstation LAN serverFull-text access may be available. Sign in or learn about subscription options.pp. 329,330,331,332,333
TRAMPS/2: trace referenced analysis model of the personal system/2Full-text access may be available. Sign in or learn about subscription options.pp. 322,323,324,325,326,327,328
The designs of two-level pipelined systolic arrays for recursive digital filters with maximum throughput rateFull-text access may be available. Sign in or learn about subscription options.pp. 317,318,319,320,321
A systolic architecture for computing inverses in finite fields GF (2/sup m/)Full-text access may be available. Sign in or learn about subscription options.pp. 312,313,314,315,316
The design of two-dimensional FIR and IIR filter architectures for HDTV signal processingFull-text access may be available. Sign in or learn about subscription options.pp. 307,308,309,310,311
Wafer-scale systolic array for adaptive antenna processingFull-text access may be available. Sign in or learn about subscription options.pp. 304,305,306
Channel mobility of GeSi quantum-well P-MOSFETsFull-text access may be available. Sign in or learn about subscription options.pp. 301,302,303
Advanced bipolar circuits-a perspectiveFull-text access may be available. Sign in or learn about subscription options.pp. 394,395,396,397
A new type of curvature-compensated CMOS bandgap voltage referencesFull-text access may be available. Sign in or learn about subscription options.pp. 398,399,400,401,402
Accurate parametric interconnect modeling for high frequency LSI/VLSI circuits and systemsFull-text access may be available. Sign in or learn about subscription options.pp. 403,404,405,406,407,408
Design of pseudoexhaustive testable PLA with low overheadFull-text access may be available. Sign in or learn about subscription options.pp. 409,410,411,412,413
A new pseudo-exhaustive test methodFull-text access may be available. Sign in or learn about subscription options.pp. 414,415,416,417,418
Parallel sequence fault simulation for synchronous sequential circuitsFull-text access may be available. Sign in or learn about subscription options.pp. 419,420,421,422,423
An event-driven incremental timing fault simulatorFull-text access may be available. Sign in or learn about subscription options.pp. 424,425,426,427
Extraction of defect characteristics for yield estimation using the double bridge test structureFull-text access may be available. Sign in or learn about subscription options.pp. 428,429,430,431,432
On integrating control algorithms for buffer management and concurrency for parallel transaction processing systemsFull-text access may be available. Sign in or learn about subscription options.pp. 433,434,435,436,437,438
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