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1991 International Symposium on VLSI Technology, Systems, and Applications

May 22 1991 to May 24 1991

Taipei, Taiwan

Table of Contents

High-density ASICs with a three-dimensional CMOS processFull-text access may be available. Sign in or learn about subscription options.pp. 297,298,299,300
by G. Roos, B. Hofflinger, M. Schubert, R. Zingg
An analytical model of threshold voltage and subthreshold swing for ultra-thin-film SOI MOSFETsFull-text access may be available. Sign in or learn about subscription options.pp. 293,294,295,296
by Heng Tien Chen, Ruey Shing Huang
A new model on the mechanisms of high-frequency AC hot-carrier effects in MOS devicesFull-text access may be available. Sign in or learn about subscription options.pp. 288,289,290,291,292
by Chung-Yu Wu, Charng-Feng Hsu, Ying-Che Wu
A new MOSFET hot carrier model in SPICE feasible for VLSI reliability analysisFull-text access may be available. Sign in or learn about subscription options.pp. 283,284,285,286,287
by S.S. Chung, P.-C. Hsu, J.-S. Lee
The improvement of I-V characteristics curve fitting by the modification of SPICE model-level 3Full-text access may be available. Sign in or learn about subscription options.pp. 278,279,280,281,282
by Chung-Zen Chen
Depletion region formation at low temperaturesFull-text access may be available. Sign in or learn about subscription options.pp. 274,275,276,277
by C.R. Viswanathan, R. Divakaruni, V. Prabhakar
Advanced bipolar technology for the 1990sFull-text access may be available. Sign in or learn about subscription options.pp. 269,270,271,272,273
by J.Y.-C. Sun, J.H. Comfort, J. Warnock, J.D. Cressler, G. Patton, J.M.C. Stork, J. Burghartz, D. Harame, E. Crabbe, P.-F. Lu, M. Arienzo, B. Meyerson
Stacked capacitor cells for 64 MDRAMFull-text access may be available. Sign in or learn about subscription options.pp. 264,265,266,267,268
by T. Matsukawa, T. Nakano
A 13-bit analog interface for microprocessor-based systemsFull-text access may be available. Sign in or learn about subscription options.pp. 260,261,262,263
by J.-Y. Michel, H. Mohajeri, Chanh Vi Tran
A single chip mixed digital/analog signal processor in 1.2 mu CMOS interfacing 4 analog subscriber lines to the PCM digital System 12 exchangeFull-text access may be available. Sign in or learn about subscription options.pp. 257,258,259
by J. Sevenhans, D. Haspeslagh, A. Delarbre, L. Kiss, E. Moerman
A transceiver for 800 kb/s full-duplex transmission over digital subscriber loops using a custom VLSI adaptive filter processorFull-text access may be available. Sign in or learn about subscription options.pp. 252,253,254,255,256
by B.A. Itri, R.H. Brackert, H.T. Nicholas, H. Samueli
An instruction set for a programmable signal processor dedicated to Viterbi detectionFull-text access may be available. Sign in or learn about subscription options.pp. 247,248,249,250,251
by Hui-ling Lou, J.M. Cioffi
A design and implementation of multi-dimensional Y-C separation filters for NTSC TV signalsFull-text access may be available. Sign in or learn about subscription options.pp. 242,243,244,245,246
by K. Ashizawa, T. Yoshida, A. Nishihara
A video buffer controller design for HDTV/BISDN systemFull-text access may be available. Sign in or learn about subscription options.pp. 237,238,239,240,241
by Shyi-Ching Liau
Experimental VLSI for HDTV and broadband fiber networksFull-text access may be available. Sign in or learn about subscription options.pp. 232,233,234,235,236
by J.A. Bellisio, R.R. Cordell
HDTV in 1990sFull-text access may be available. Sign in or learn about subscription options.pp. 227,228,229,230,231
by K. Ogi, H. Yamada
A novel method to characterize and screen mobile ion contaminated nonvolatile memory productsFull-text access may be available. Sign in or learn about subscription options.pp. 224,225,226
by F. Shone, H. Liou, C. Pan, B. Woo, M. Holler
Effects of the field-edge transistor on SOI MOSFETsFull-text access may be available. Sign in or learn about subscription options.pp. 219,220,221,222,223
by Jian Chen, Ping Keung Ko, Chenming Hu, R. Solomon, Tung-Yi Chan
Implications of waveform and thickness dependence of SiO/sub 2/ breakdown on accelerated testingFull-text access may be available. Sign in or learn about subscription options.pp. 214,215,216,217,218
by E. Rosenbaum, R. Moazzami, C. Hu
Characterization of thin oxide damage during aluminum etching and photoresist ashing processesFull-text access may be available. Sign in or learn about subscription options.pp. 210,211,212,213
by H. Shin, C.-C. King, R. Moazzami, T. Horiuchi, C. Hu
Suppression of both sidewall injection and hot-carrier effects using laterally graded emitter in bipolar transistorsFull-text access may be available. Sign in or learn about subscription options.pp. 205,206,207,208,209
by Tzuen-Hsi Huang, Ming-Jer Chen, Ching-Yuan Wu
Determination of MOSFET's channel doping profile right up to SiO/sub 2//Si interfaceFull-text access may be available. Sign in or learn about subscription options.pp. 201,202,203,204
by Pole-Shang Lin, Chih-Hsien Wang
Lateral distribution of hot-carrier-induced oxide charge and interface traps in MOSFET'sFull-text access may be available. Sign in or learn about subscription options.pp. 196,197,198,199,200
by W. Chen, A. Balasinski, T.-P. Ma
Simulation of P- and N-MOSFET hot-carrier degradation in CMOS circuitsFull-text access may be available. Sign in or learn about subscription options.pp. 191,192,193,194,195
by P.M. Lee, T. Garfinkel, P.K. Ko, C. Hu
VLSI/ULSI research methodology in the US and JapanFull-text access may be available. Sign in or learn about subscription options.pp. 187,188,189,190
by Y. Nishi
GEAR: a general area router using planning approachFull-text access may be available. Sign in or learn about subscription options.pp. 182,183,184,185,186
by Yuh-Lin Chen, Sao-Jie Chen, Chia-Chun Tsai, Yu-Hen Hu
VLSI routing methodology for quadrupole metal sea-of-cells designFull-text access may be available. Sign in or learn about subscription options.pp. 177,178,179,180,181
by H.H. Chen, C.K. Wong
Using timed Boolean algebra to solve false path problem in timing analysisFull-text access may be available. Sign in or learn about subscription options.pp. 172,173,174,175,176
by Shiang-Tang Huang, Tai-Ming Parng, Jyuo-Ming Shyu
Evaluation driven layout synthesisFull-text access may be available. Sign in or learn about subscription options.pp. 167,168,169,170,171
by A.C.-H. Wu, D.D. Gajski, G.-D. Chen
Circuit optimization techniques in DROIDFull-text access may be available. Sign in or learn about subscription options.pp. 162,163,164,165,166
by H.Y. Chen, S. Agarwala, S. Dutta, D. Matzke, P. Bosshart, S. Lusky, P. Kollaritsch
Simultaneous topology selection and timing assignment for LSI circuits based on semi-analytical delay-area expressionFull-text access may be available. Sign in or learn about subscription options.pp. 157,158,159,160,161
by Zhi-jian Dai, K. Asada
Transient sensitivity computation for waveform relaxation-based timing simulationFull-text access may be available. Sign in or learn about subscription options.pp. 152,153,154,155,156
by Chun-Jung Chen, Jyuo-Min Shyu, Wu-Shiung Feng
An integrated technology CAD environmentFull-text access may be available. Sign in or learn about subscription options.pp. 147,148,149,150,151
by F. Fasching, C. Fischer, S. Halama, H. Pimingstorfer, H. Read, S. Selberherr, H. Stippel, P. Verhas, K. Wimmer
Approaches to high pin count and high power surface mount packagesFull-text access may be available. Sign in or learn about subscription options.pp. 141,142,143,144,145,146
by P. Lin, M. McShane
The advanced improvement of PN mesa junction diode prepared by silicon-wafer direct bondingFull-text access may be available. Sign in or learn about subscription options.pp. 136,137,138,139,140
by Ching-Fa Yeh, Shyang Hwang-Leu, Jui-I Tsai
Color CCD image sensorFull-text access may be available. Sign in or learn about subscription options.pp. 126,127,128,129,130
by Yeong-Wen Daih, Cheng-Chung Chien, Dar-Chang Juang, Tzer-Yaa Bin, Ching-Yi Hsu, Chang-Daw Wu, Yee-Lu Zhaog, Men-Fen Ho, Ming-Hsien Cheng, Geun-Pin Yang, Yau-Feng Luo, Chung-Hsien Horng
Photo-excited dry cleaning for ULSI devicesFull-text access may be available. Sign in or learn about subscription options.pp. 122,123,124,125
by Y. Sato, R. Sugino, M. Okuno, N. Kikuchi, J. Teramae, A. Ogawa, S. Hijiya, T. Ito
A deep-submicrometer raised source/drain LDD structure fabricated using hot-wall epitaxyFull-text access may be available. Sign in or learn about subscription options.pp. 117,118,119,120,121
by J.E. Moon, C. Galewski, T. Garfinkel, M. Wong, W.G. Oldham, P.K. Ko, C. Hu
Double spacer technique for titanium self-aligned silicidation technologyFull-text access may be available. Sign in or learn about subscription options.pp. 113,114,115,116
by W.D. Su, S.W. Chang
Al-plug stacked contact/via process for deep submicron CMOS multilayer metal technologyFull-text access may be available. Sign in or learn about subscription options.pp. 109,110,111,112
by F.T. Liou, F.S. Chen, G.A. Dixit, M. Zamanian, G. DeSanti
Suppression of boron penetration in BF/sub 2//sup +/-implanted polysilicon gated p-MOSFETs with reoxidized nitrided gate oxidesFull-text access may be available. Sign in or learn about subscription options.pp. 104,105,106,107,108
by G.Q. Lo, W. Ting, D.L. Kwong
Cooling for high heat flux VLSI systemsFull-text access may be available. Sign in or learn about subscription options.pp. 99,100,101,102
by R.C. Jaeger, J.S. Goodling
A 32 bit microcontroller with an embedded flash EEPROMFull-text access may be available. Sign in or learn about subscription options.pp. 94,95,96,97,98
by C. Kuo, M. Weidner, T. Toms, H. Choe, A. Harwood, R. Jones, J. Jelemensky, Ko-Min Chang
Identification of DRAM sense amplifier imbalance using hot carrier evaluationFull-text access may be available. Sign in or learn about subscription options.pp. 90,91,92,93
by S. Aur, C. Duvvury, H. McAdams, C. Perrin
Circuit techniques for a wide world I/O path 64 Meg DRAMFull-text access may be available. Sign in or learn about subscription options.pp. 87,88,89
by K. Komatsuzaki, S. Sukegawa, K. Fung, T. Inui, T. Suzuki, R. Rountree, J. You, B. Borchers, T. Komatsuzaki, H. Shichijo, H. Tran, D. Scott
A subnanosecond clamped-bit-line sense amplifier for 1T dynamic RAMsFull-text access may be available. Sign in or learn about subscription options.pp. 82-86
by T.N. Blalock, R.C. Jaeger
A coded block adaptive neural network structure for pattern recognition VLSIFull-text access may be available. Sign in or learn about subscription options.pp. 79,80,81
by J.B. Kuo, Y.K. Chen, Y.H. Lu, W.C. Mao
Multiprocessor-based video motion detection using adaptive neural systemsFull-text access may be available. Sign in or learn about subscription options.pp. 74,75,76,77,78
by J.C. Lee, B.J. Sheu, C.F. Chang, R. Chellappa
A scheme for implementation of neural networks with replicated receptive fieldsFull-text access may be available. Sign in or learn about subscription options.pp. 69,70,71,72,73
by M. Chuang
A multichip analog neural networkFull-text access may be available. Sign in or learn about subscription options.pp. 64,65,66,67,68
by J. Van der Spiegel, P. Mueller, V. Agami, P. Aziz, D. Blackman, P. Chance, A. Choudhury, C. Donham, R. Etienne-Cummings, L. Jones, J. Kim, P. Kinget, M. Massa, W. von Koch, J. Xin
DARPA artificial neural network technology programFull-text access may be available. Sign in or learn about subscription options.pp. 61,62,63
by B.L. Yoon
Misfit stress in p/p+ epitaxial silicon wafers: effect and eliminationFull-text access may be available. Sign in or learn about subscription options.pp. 57,58,59,60
by W. Lin, D.W. Hill, C.L. Paulnack, M.J. Kelly
A high quality stacked thermal/LPCVD gate oxide for ULSIFull-text access may be available. Sign in or learn about subscription options.pp. 52,53,54,55,56
by R. Moazzami, C. Hu
Superior performance and reliability of MOSFETs with ultrathin gate oxides prepared by conventional furnace oxidation of Si in pure N/sub 2/O ambientFull-text access may be available. Sign in or learn about subscription options.pp. 47,48,49,50,51
by W. Ting, G.Q. Lo, J. Ahn, D.L. Kwong
Pits reduction for poly Buffer LOCOS in VLSI fabricationFull-text access may be available. Sign in or learn about subscription options.pp. 43,44,45,46
by W.D. Su, P.P.J. Lee, C.C. Chang, C.H. Cheng
LOCOS-based isolation for 0.5 mu m device with PLD (polysilicon-spacered lateral diffusion) technologyFull-text access may be available. Sign in or learn about subscription options.pp. 38,39,40,41,42
by W.S. Paik, T.Y. Jang, W.M. Park, W.T. Choi, S.G. Yang, J.H. Shin, Y.P. Kim, K.S. Oh, O.H. Kwon, Y.E. Park
Electron beam direct writing systems for 64 Mbit DRAM and beyondFull-text access may be available. Sign in or learn about subscription options.pp. 33,34,35,36,37
by K. Nakamura, N. Saitou
Selective silylation and plasma patterning of photoresist in submicron lithographyFull-text access may be available. Sign in or learn about subscription options.pp. 28,29,30,31,32
by B. Chen, T.P. Ma
Advanced i-line lithography for 0.5 mu m CMOS technologyFull-text access may be available. Sign in or learn about subscription options.pp. 22,23,24,25,26,27
by T. Yang, C.C. Fu, T.M. Wolf, T.E. Adams, J.G. Costigan, J.L. Ryan, D.E. Schrope, D.R. Stone, J.D. Cuthbert
Quarter- and sub-quarter-micron optical lithographyFull-text access may be available. Sign in or learn about subscription options.pp. 16,17,18,19,20,21
by B.J. Lin
Gigascale integration (GSI) beyond 2001Full-text access may be available. Sign in or learn about subscription options.pp. 12,13,14,15
by J.D. Meindl
The European microelectronics industry and its challenge for the ninetiesFull-text access may be available. Sign in or learn about subscription options.pp. 8,9,10,11
by H. Friedrich, F.S. Becker
Home electronics in the 1990sFull-text access may be available. Sign in or learn about subscription options.pp. 1,2,3,4,5,6
by K. Shoda
1991 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No. 91TH0368-1)Freely available from IEEE.pp. 0_1-0_1
Gallium arsenide and silicon for optical electronics: applications and technology trade-offsFull-text access may be available. Sign in or learn about subscription options.pp. 389,390,391,392,393
by R.G. Swartz
SCOPE-a simultaneous contact and planarization etch process for low-cost high-performance CMOS applicationsFull-text access may be available. Sign in or learn about subscription options.pp. 385,386,387,388
by K.K. Young, W. Uesato, H.K. Hu, P.E. Riley, S.S. Peng, K.Y. Chiu
Large-area MOVPE growth for HEMT LSIFull-text access may be available. Sign in or learn about subscription options.pp. 380,381,382,383,384
by T. Ohori, N. Tomesakai, M. Suzuki, S. Notomi, J. Komeno
Characteristics of vertical p-channel MOSFETs for high density circuit applicationFull-text access may be available. Sign in or learn about subscription options.pp. 376,377,378,379
by D.S. Wen, W.H. Chang, T.V. Rajeevakumar, G.B. Bronner, P.A. McFarland, Y. Lii, T.C. Chen, F.L. Pesavento, M.P. Manny, W. Hwang, S.H. Dhong
Peeling-free tungsten polycide process and its application in DRAM fabricationFull-text access may be available. Sign in or learn about subscription options.pp. 371,372,373,374,375
by C.S. Yoo, M.S. Lin, T.H. Lin, L.J. IJzendoorn
A 64 Mbit DRAM trench capacitor cell with field-plate isolationFull-text access may be available. Sign in or learn about subscription options.pp. 366,367,368,369,370
by C.W. Teng, Y. Okumoto, J. Liu, Ih-Chin Chen, K. Yuhara, Y. Yoneoka
A 0.5 mu m diode load 4 Mb SRAM technology using double-level Al plug metal processFull-text access may be available. Sign in or learn about subscription options.pp. 362,363,364,365
by R. Sundaresan, C.C. Wei, M. Zamanian, F.S. Chen, R.O. Miller, R.L. Hodges, W. Gaskins, P. Sagarwala, L. Nguyen, J. Huang, C. Spinner, G.S. Stagaman, L. Lu, Y.S. Lin, F. Bryant, F.T. Liou
A twin-tub CMOS using self-aligned channel-stop in conjunction with poly-buffer LOCOS for 1M/4M SRAM applicationFull-text access may be available. Sign in or learn about subscription options.pp. 358,359,360,361
by M.-L. Chen, W. Juengling, S.J. Hillenius, T.S. Yang, C.C. Fu, D.P. Favreau, R. Powell
Low power, low voltage memories for portable electronicsFull-text access may be available. Sign in or learn about subscription options.pp. 354,355,356,357
by O. Minato, K. Ishibashi
DRAM technology trend and prospectFull-text access may be available. Sign in or learn about subscription options.pp. 349,350,351,352,353
by H. Shichijo
High performance CMOS VLSI chip set for synchronous optical transmission systemsFull-text access may be available. Sign in or learn about subscription options.pp. 344,345,346,347,348
by T.C. Poon, A.J.-H. Lee, S.S. Austin, J.P. Kunz
ARES-architecture reinforcing superscalarFull-text access may be available. Sign in or learn about subscription options.pp. 338,339,340,341,342,343
by Yuh-Haur Lin, Feipei Lai, Meng-Chou Chang
CMOS cell base implementation of the SPARC architectureFull-text access may be available. Sign in or learn about subscription options.pp. 334,335,336,337
by S.T. Wang, S.J. Lai, J. Chou, H.Y. Tarn, C.C. Chang, S.W. Tung, J.Y. Ray, J.Y. Kuo, L.M. Yang
Modeling and design analysis of a workstation LAN serverFull-text access may be available. Sign in or learn about subscription options.pp. 329,330,331,332,333
by F.W. Shih, Jyh-Herng Chow, Shauchi Ong, Limin Hu
TRAMPS/2: trace referenced analysis model of the personal system/2Full-text access may be available. Sign in or learn about subscription options.pp. 322,323,324,325,326,327,328
by D.M. Wronski, T.B. Genduso, C. Moy
The designs of two-level pipelined systolic arrays for recursive digital filters with maximum throughput rateFull-text access may be available. Sign in or learn about subscription options.pp. 317,318,319,320,321
by Shih-Chieh Wen, Chi-Min Liu, Chein-Wei Jen
A systolic architecture for computing inverses in finite fields GF (2/sup m/)Full-text access may be available. Sign in or learn about subscription options.pp. 312,313,314,315,316
by Chin-Liang Wang, Jung-Lung Lin
The design of two-dimensional FIR and IIR filter architectures for HDTV signal processingFull-text access may be available. Sign in or learn about subscription options.pp. 307,308,309,310,311
by Hwan-Rei Lee, Chein-Wei Jen
Wafer-scale systolic array for adaptive antenna processingFull-text access may be available. Sign in or learn about subscription options.pp. 304,305,306
by C.M. Rader
Channel mobility of GeSi quantum-well P-MOSFETsFull-text access may be available. Sign in or learn about subscription options.pp. 301,302,303
by D.K. Nayak, J.C.S. Woo, J.S. Park, K.L. Wang, K.P. MacWilliams
Advanced bipolar circuits-a perspectiveFull-text access may be available. Sign in or learn about subscription options.pp. 394,395,396,397
by C.T. Chuang
A new type of curvature-compensated CMOS bandgap voltage referencesFull-text access may be available. Sign in or learn about subscription options.pp. 398,399,400,401,402
by Shu-Yuan Chin, Chung-Yu Wu
Accurate parametric interconnect modeling for high frequency LSI/VLSI circuits and systemsFull-text access may be available. Sign in or learn about subscription options.pp. 403,404,405,406,407,408
by C.G. Lin-Hendel, J. Loos, K.K. Thornber
Design of pseudoexhaustive testable PLA with low overheadFull-text access may be available. Sign in or learn about subscription options.pp. 409,410,411,412,413
by Wen-Zen Shen, Gwo-Haur Hwang, Wen-Jun Hsu, Yun-Jung Jan
A new pseudo-exhaustive test methodFull-text access may be available. Sign in or learn about subscription options.pp. 414,415,416,417,418
by Jhing-Fa Wang, Wei-Lun Wang, Tzyy-Kuen Tien
Parallel sequence fault simulation for synchronous sequential circuitsFull-text access may be available. Sign in or learn about subscription options.pp. 419,420,421,422,423
by Chen-Pin Kung, Chen-Shang Lin
An event-driven incremental timing fault simulatorFull-text access may be available. Sign in or learn about subscription options.pp. 424,425,426,427
by Shyh-Jye Jou, Wen-Zen Shen, Shwu-Huey Chiou
Extraction of defect characteristics for yield estimation using the double bridge test structureFull-text access may be available. Sign in or learn about subscription options.pp. 428,429,430,431,432
by J.B. Khare, B.J. Daniels, D.M. Campbell, M.E. Thomas, W. Maly
On integrating control algorithms for buffer management and concurrency for parallel transaction processing systemsFull-text access may be available. Sign in or learn about subscription options.pp. 433,434,435,436,437,438
by Shiwei Wang, Y. Hsu
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