Abstract
Emerging non-volatile memory (NVM) technologies provide a new way to solve the I/O bottleneck problem. As one of the widely respected solutions, hybrid storage device performance in the real environment is worth studying. Previously, due to the delayed progress of NVM, most of the studies are proceeded on simulated devices. In this paper, an empirical study is presented on the state-of-the-art hybrid storage device - Intel Optane H10, which is designed with Optane Memory and Quad-Level Cell (QLC) NAND flash. Several interesting findings are concluded with the study, which should be well considered during the employment.