Channel mobility of GeSi quantum-well P-MOSFETs

D.K. Nayak; J.C.S. Woo; J.S. Park; K.L. Wang; K.P. MacWilliams

doi:10.1109/VTSA.1991.246744

1991 International Symposium on VLSI Technology, Systems, and Applications

Channel mobility of GeSi quantum-well P-MOSFETs

Year: 1991, Pages: 301,302,303

DOI Bookmark: 10.1109/VTSA.1991.246744

Authors

D.K. Nayak, Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
J.C.S. Woo, Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
J.S. Park, Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
K.L. Wang, Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
K.P. MacWilliams

Abstract

The results of channel mobility of a GeSi quantum-well PMOS from 8 K to 300 K are presented. As the temperature is lowered below 25 K, the field effect channel mobility sharply increases with lowering of the temperature. The mobility at 8 K is found to be 3 times higher than that at 25 K. At very low temperature ( approximately 10 K), the transition of channel transconductance with gate voltage from a high (GeSi channel) to a low (surface channel) value has been clearly observed.<>

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Channel mobility of GeSi quantum-well P-MOSFETs

Authors

Abstract

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